Manual Crystal Growth Technology: Semiconductors and Dielectrics

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D Phonons and fluctuations in low dimensional structures Materials for energy and environment. E Defect-induced effects in nanomaterials Nanomaterials.


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G Carbon- or nitrogen-containing nanostructured thin films Nanomaterials. I Solution processing and properties of functional oxide thin films and nanostructures Nanomaterials. J Laser interaction with advanced materials: fundamentals and applications Materials and light. L Chromogenic Materials and Devices Materials and light.

N Converging technology for nanobio applications Hybrid, organic and bio-materials. O Computational modelling of organic semiconductors: from the quantum world to actual devices Hybrid, organic and bio-materials. P Carbon materials: surface chemistry and biomedical applications Hybrid, organic and bio-materials. Q Hybrid materials engineering in biology, chemistry and physics Hybrid, organic and bio-materials. R Towards lightweight and flexible electrochemical devices Hybrid, organic and bio-materials. S Memristor materials, mechanisms and devices for unconventional computing Hybrid, organic and bio-materials.

DD Functional materials and devices for organic electronics Hybrid, organic and bio-materials. T Non-classical nucleation and crystallization Crystal growth in materials science. U Crystal growth related twins and point defects in semiconductors and dielectrics Crystal growth in materials science. V Effect of natural and forced convection in materials crystallization Crystal growth in materials science. W Crystals for energy conversion and storage Crystal growth in materials science. X Materials research for group IV semiconductors: growth, characterization and technological developments Bilateral energy conference.

Y Advanced materials and characterization techniques for solar cells II Bilateral energy conference. Z Materials development for solar fuel production and energy conversion Bilateral energy conference. BB Materials by design for energy applications through theory and experiment Bilateral energy conference.


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  • Local Electric Fields in Dielectric and Semiconductors.
  • CC Materials for electrochemical energy conversion - from modular to large-scale energy generation and storage Bilateral energy conference. This symposium is aiming to gather people interested in the origin and possible control of grown-in defects in semiconductor and dielectric materials in single or multi-crystalline form. It will mainly focus on "0D" point defects and "2D" twin boundaries.

    However, point defect interaction with dislocations 1D , dislocation loops 2D , precipitates 3D may also be considered. Bulk single crystals are used in electronic, optoelectronic, optic, sensors, etc. Consequently, any defect in the structure is potentially detrimental to their use.

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    On the other hand defects, especially point defects such as dopants or color centers, are intentionally added in order to tailor the crystal to its applications. Twinning is a major defect that totally impairs the use of material for electronic or optical application. In spite of the fact that twins are not impacting photovoltaic efficiency, it has been shown that successive crossing of twins ultimately gives a random grain boundary structure, which is detrimental.


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    • In spite of its tremendous drawbacks, the origin of twinning during growth from the melt remains essentially a mystery. Some explanations have been proposed in the past and recent years, but they suffer from a lack of generality, poor quantitative agreement with experimental data and lack of accurate physical properties such as twin boundary energies.

      Crystal Growth Technology: Semiconductors and Dielectrics

      Point defect origin is most well understood in the case of vacancies and interstitials in electronic Si. Color center and impurity behavior in dielectric crystals is complicated by the iono-covalent bonding in these materials leading to various oxidation states of the dopants as function of the local conditions during growth. In oxides, the effect of growth conditions on point defect distribution and valence states is nearly unknown at the moment. Michael Dudley Dept.

      Resume : The problem of nonstoichiometry NS determination in chemical compounds is very important both for crystal growth, film preparation and powdered material production. A precise mass gross analysis does not allow efficiently detecting of NS due to uncertainty in pure element molar mass. Provided non-isotope purity of elements one could take for sure 5 significant figures for composited element molar mass. A universal approach for a development of a NS measurement technique for binary compounds has been proposed.

      The approach is based on a pi-T-x diagram analysis for binary chemical compounds. The techniques were developed for NS determination in. Resume : Nitride semiconductors are the key materials for solid-state lighting, and they are also increasingly used for power electronics. For all these applications, high-quality material is essential. In the epitaxial layers that provide device functionality, point defects may act as compensating centers, charge traps, or recombination centers.

      However, unintentional impurities often play an equally important role; for instance, carbon that is unavoidably incorporated during metal-organic chemical vapor deposition can act as a source of yellow luminescence.